CEP15A03/CEB15A03
PRELIMINARY
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 190A, RDS(ON) = 4.5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
190
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
760
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
200
W
PD
1.3
W/ C
mJ
A
EAS
IAS
405
52
TJ,Tstg
-55 to 175
C
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
0.75
62.5
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
This is preliminary information on a new product in development now .
Details are subject to change without notice .
Rev 2. 2010.June
http://www.cetsemi.com
1