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CEB13N10 参数 Datasheet PDF下载

CEB13N10图片预览
型号: CEB13N10
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 98 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEB13N10的Datasheet PDF文件第2页浏览型号CEB13N10的Datasheet PDF文件第3页浏览型号CEB13N10的Datasheet PDF文件第4页  
CEP13N10/CEB13N10  
N-Channel Enhancement Mode Field Effect Transistor  
FEATURES  
100V, 12.8A, RDS(ON) = 180m@VGS = 10V.  
Super high dense cell design for extremely low RDS(ON)  
High power and current handing capability.  
Lead free product is acquired.  
.
D
TO-220 & TO-263 package.  
G
CEB SERIES  
TO-263(DD-PAK)  
CEP SERIES  
TO-220  
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted  
c
Parameter  
Symbol  
VDS  
VGS  
ID  
Limit  
Units  
V
Drain-Source Voltage  
100  
Gate-Source Voltage  
±20  
12.8  
V
Drain Current-Continuous  
A
Drain Current-Pulsed a  
IDM  
50  
A
Maximum Power Dissipation @ TC = 25 C  
- Derate above 25 C  
65  
W
PD  
0.43  
W/ C  
C
Operating and Store Temperature Range  
TJ,Tstg  
-55 to 175  
Thermal Characteristics  
Parameter  
Symbol  
RθJC  
Limit  
2.3  
Units  
C/W  
C/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
RθJA  
62.5  
2005.August  
http://www.cetsemi.com  
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