CEP13N10/CEB13N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 12.8A, RDS(ON) = 180mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON)
High power and current handing capability.
Lead free product is acquired.
.
D
TO-220 & TO-263 package.
G
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
100
Gate-Source Voltage
±20
12.8
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
50
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
65
W
PD
0.43
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
2.3
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
62.5
2005.August
http://www.cetsemi.com
1
CET [ CHINO-EXCEL TECHNOLOGY ]
