SIDAC
TELECOMMUNICATION SYSTEM PROTECTORS
V
BO
Part Number
Volts
MIN
I
PP
Amps
10×160μs
10×1000μ s
V
TM
Volts
MAX
I
T
I
S
I
H
C
O
pF
1MHz
Typical
Volts
MIN
MAX
Amps mAmps mAmps
MAX
MAX
MIN
MAX
MAX
C3100D50
C3100D75
C3100D100
220
220
220
275
275
275
350
350
350
100
125
150
50
75
100
3.0
3.0
3.0
1
1
1
800
800
800
130
130
130
30
45
60
•
Storage temperature : -40 to 150℃
•
Operating temperature : -40 to 150℃
Terms and symbols
No.
1
Item
Repetitive Peak
Off-state Voltage
Breakover
Voltage
Surge Current
Capacity
Symbol
V
DRM
Test Condition
Minimum DC voltage that can be applied to the device
while maintaining it in the off-state condition.
I
DRM
=1μA
Maximum voltage across the device at breakdown
measured under a specified voltage and current rate of rise.
Rated peak pulse current of specified amplitude and
waveshape that may be applied without damage.
Apply the impulse 10×160μs or 10×1000μs current
waveform for 3 times with intervals of 30 seconds.
4
5
6
7
8
Peak On-state
Voltage
On-state Current
Switching Current
Holding Current
Off-state
Capacitance
V
TM
I
T
I
S
I
H
C
O
Maximum voltage across the device in the on-state
condition at a specified on-state current (I
T
)
I
T
=1A
Maximum rated continuous on state current.
Maximum current required to switch to on-state.
Minimum current required to maintain the device in the
on-state condition.
Typical capacitance measured in off-state.
f=1MHz
2
V
BO
3
I
PP
Version 1.0
2/4
1 April 2001
CERAMATE [ CERAMATE TECHNICAL ]
