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CS65-70P 参数 Datasheet PDF下载

CS65-70P图片预览
型号: CS65-70P
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流70安培RMS , 200 THRU 1200伏 [SILICON CONTROLLED RECTIFIER 70 AMPS RMS, 200 THRU 1200 VOLTS]
分类和应用: 可控硅
文件页数/大小: 2 页 / 80 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号CS65-70P的Datasheet PDF文件第2页  
DATA SHEET
CS65-70B
CS65-70D
CS65-70M
CS65-70N
CS65-70P
CS65-70PB
SILICON CONTROLLED RECTIFIER
70 AMPS RMS, 200 THRU 1200 VOLTS
TO-65 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS65-70B series types are High Power Silicon Controlled Rectifiers designed for
phase control applications.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
Peak Non-Repetitive Reverse Voltage
RMS On-State Current (TC=102°C)
Average On-State Current (TC=102°C)
Peak One Cycle Surge ( 60Hz)
I
2
t Value for Fusing (t=8.3ms)
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Gate Power
Average Gate Power (tp=10µs)
Peak Gate Current
Critical Rate of Rise of On-State Current
Storage Temperature
Junction Temperature
Thermal Resistance
VDRM, VRRM
VRSM
IT(RMS)
IT(AV)
ITSM
I
2
t
VFGM
VRGM
PGM
PG(AV)
IGM
di/dt
Tstg
TJ
Θ
J-C
CS65 CS65 CS65 CS65
-70B -70D -70M -70N
200
300
400
500
600
700
63
40
1000
4100
20
10
10
1.0
3.0
200
-65 to +150
-65 to +125
0.35
800
900
CS65
-70P
1000
1100
CS65
-70PB UNITS
1200
1300
V
V
A
A
A
A
2
s
V
V
W
W
A
A/µs
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
IDRM, IRRM
IGT
IH
VGT
VTM
dv/dt
TEST CONDITIONS
Rated VDRM, VRRM, TC=125°C
VD=12V, RL=33Ω
IT=500mA
VD=12V, RL=33Ω
ITM=500A
VD=.67 x VDRM, TC=125°C
MIN
TYP
MAX
6.0
100
200
3.0
3.0
200
UNITS
mA
mA
mA
V
V
V/µs
(SEE REVERSE SIDE)
R2