BD136
BD138
BD140
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD136, BD138,
and BD140 are silicon PNP epitaxial planar transistors
designed for audio amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-126 CASE
MAXIMUM RATINGS:
(TC=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Peak Collector Current
ICM
Continuous Base Current
IB
Peak Base Current
IBM
Power Dissipation (Tmb<70°C)
PD
Power Dissipation (TA=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
Θ
Jmb
Thermal Resistance
Θ
JA
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
fT
BD136
45
45
BD138
BD140
60
100
60
80
5.0
1.5
2.0
0.5
1.0
8.0
1.25
-65 to +150
10
100
UNITS
V
V
V
A
A
A
A
W
W
°C
°C/W
°C/W
CHARACTERISTICS:
(TC=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=30V
VCB=30V (TC=125°C)
VEB=5.0V
IC=30mA (BD136)
45
IC=30mA (BD138)
60
IC=30mA (BD140)
80
IC=500mA, IB=50mA
VCE=2.0V, IC=500mA
VCE=2.0V, IC=5.0mA
40
VCE=2.0V, IC=150mA
63
VCE=2.0V, IC=500mA
25
VCE=5.0V, IC=50mA, f=100MHz
160
BD136-10
BD138-10
BD140-10
MIN
MAX
63
160
MAX
100
10
100
0.5
1.0
250
UNITS
nA
μA
nA
V
V
V
V
V
MHz
SYMBOL
hFE
TEST CONDITIONS
VCE=2.0V, IC=150mA
BD136-16
BD138-16
BD140-16
MIN
MAX
100
250
R3 (13-March 2014)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
