BCX51
BCX52
BCX53
SURFACE MOUNT
PNP SILICON TRANSISTOR
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX51,
BCX52, and BCX53 types are PNP Silicon
Transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high current general
purpose amplifier applications.
SOT-89 CASE
MAXIMUM RATINGS
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Peak Base Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
PD
TJ,Tstg
Θ
JA
BCX51
45
45
BCX52
60
60
5.0
1.0
1.5
100
200
1.2
-65 to +150
104
BCX53
100
80
UNITS
V
V
V
A
A
mA
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=30V
ICBO
VCB=30V, TA=125°C
IEBO
VEB=5.0V
BVCBO
IC=100µA (BCX51)
45
BVCBO
IC=100µA (BCX52)
60
BVCBO
IC=100µA (BCX53)
100
BVCEO
IC=10mA (BCX51)
45
BVCEO
IC=10mA (BCX52)
60
BVCEO
IC=10mA (BCX53)
80
VCE(SAT)
IC=500mA, IB=50mA
VBE(ON)
VCE=2.0V, IB=500mA
hFE
VCE=2.0V, IC=5.0mA
63
hFE
VCE=2.0V, IC=150mA
63
hFE
VCE=2.0V, IC=150mA
(BCX51-10, BCX52-10, BCX53-10)
63
hFE
VCE=2.0V, IC=150mA
(BCX51-16, BCX52-16, BCX53-16)
100
hFE
VCE=2.0V, IC=500mA
40
fT
VCE=5.0V, IC=10mA, f=100MHz
50
MAX
100
10
100
0.5
1.0
250
160
250
UNITS
nA
µA
nA
V
V
V
V
V
V
V
V
MHz
R1 ( 18-December 2001)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
