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BC857B 参数 Datasheet PDF下载

BC857B图片预览
型号: BC857B
PDF下载: 下载PDF文件 查看货源
内容描述: 表面贴装型PNP硅晶体管 [SURFACE MOUNT PNP SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 326 K
品牌: CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
 浏览型号BC857B的Datasheet PDF文件第2页  
BC856 SERIES
BC857 SERIES
BC858 SERIES
SURFACE MOUNT
PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC856, BC857
and BC858 Series types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCBO
BVCEO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(ON)
VBE(ON)
fT
NF
Note: Reverse Lead Codes Available, Add “R” to the end of
the Part # and Marking Code.
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
TJ, Tstg
Θ
JA
BC858
30
30
BC857
BC856
50
80
45
65
5.0
100
200
200
350
-65 to +150
357
MAX
15
4.0
100
UNITS
V
V
V
mA
mA
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
V
MHz
dB
BC857C
BC858C
MIN MAX
420
800
CHARACTERISTICS:
(TA=25°C unless
TEST CONDITIONS
VCB=30V
VCB=30V, TA=150°C
VEB=5.0V
IC=10μA (BC858)
IC=10μA (BC857)
IC=10μA (BC856)
IC=10mA (BC858)
IC=10mA (BC857)
IC=10mA (BC856)
IE=10μA
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
IC=2.0mA, VCE=5.0V
IC=10mA, VCE=5.0V
VCE=5.0V, IC=10mA, f=100MHz
VCE=5.0V, IC=200μA,
RS=2.0KΩ, f=1.0KHz, BW=200Hz
otherwise noted)
MIN
30
50
80
30
45
65
5.0
0.30
0.65
0.75
0.82
0.6
100
10
BC856A
BC857A
BC858A
MIN MAX
125 250
BC856B
BC857B
BC858B
MIN MAX
220 475
hFE
VCE=5.0V, IC=2.0mA
R2 (20-November 2009)