2N2221
2N2222
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221, 2N2222
types are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
fT
Cob
Cib
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
Θ
JA
Θ
JC
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
60
30
5.0
800
400
1.2
-65 to +200
438
146
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=50V
-
VCB=50V, TA=150°C
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA,
IC=500mA,
IC=150mA,
IC=500mA,
IB=15mA
IB=50mA
IB=15mA
IB=50mA
-
-
60
30
5.0
-
-
0.6
-
250
-
-
MAX
10
10
10
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
VCE=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=100kHz
VEB=0.5V, IC=0, f=100kHz
R1 (30-January 2012)
CENTRAL [ CENTRAL SEMICONDUCTOR CORP ]
