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NEZ5964-8DL 参数 Datasheet PDF下载

NEZ5964-8DL图片预览
型号: NEZ5964-8DL
PDF下载: 下载PDF文件 查看货源
内容描述: [RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, T-61, 2 PIN]
分类和应用: 局域网晶体管
文件页数/大小: 6 页 / 65 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NEZ5964-8DL的Datasheet PDF文件第2页浏览型号NEZ5964-8DL的Datasheet PDF文件第3页浏览型号NEZ5964-8DL的Datasheet PDF文件第4页浏览型号NEZ5964-8DL的Datasheet PDF文件第5页浏览型号NEZ5964-8DL的Datasheet PDF文件第6页  
NEZ5964-15D  
NEZ5964-15DL  
NEZ5964-8D  
NEZ5964-8DL  
NEZ5964-4D  
NEZ5964-4DL  
C-BAND INTERNALLY  
MATCHED POWER GaAs MESFET  
FEATURES  
OUTPUT POWER AND EFFICIENCY  
vs. INPUT POWER  
HIGH POUT  
18W (42.5 dBm) Typ P1dB for NEZ5964-15D/15DL  
100%  
80%  
45  
40  
35  
-15D  
-8D  
9W (39.5 dBm) Typ P1dB for NEZ5964-8D/8DL  
4.5W (36.5 dbm) Typ P1dB for NEZ5964-4D/4DL  
POUT  
HIGH EFFICIENCY  
37% ηADD for 4.5W Device  
35% ηADD for 9W Device  
33% ηADD for 18W Device  
-4D  
60%  
40%  
-4D  
LOW IMD  
30  
25  
20  
-8D  
-15D  
-45 dBc IM3 @ 31.5 dBm POUT (SCL) -15DL  
-45 dBc IM3 @ 29 dBm POUT (SCL) -8DL  
-45 dBc IM3 @ 26 dBm POUT (SCL) -4DL  
20%  
0%  
Efficiency  
32  
SiO2 PASSIVATED CHIP  
For Power/Gain Stability Under RF Overdrive  
CLASS A OPERATION  
17  
12  
37  
22  
27  
INTERNALLY MATCHED (IN/OUT)  
Input Power, PIN (dBm)  
SUPERIOR GAIN FLATNESS  
INDUSTRY COMPATIBLE HERMETIC PACKAGES  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
PART NUMBER  
NEZ5964-4D  
NEZ5964-4DL  
T-61  
NEZ5964-8D  
NEZ5964-8DL  
T-61  
NEZ5964-15D  
NEZ5964-15DL  
T-65  
PACKAGE OUTLINE  
SYMBOLS PARAMETERS AND CONDITIONS  
UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX TEST CONDITIONS  
1
P1dB  
Output Power at PIdB  
IDSQ = 0.8A, (RF Off)  
IDSQ = 1.6A  
dBm 35.5 36.5  
dBm  
dBm  
VDS = 10V  
f = 5.9  
to 6.45 GHz  
38.5 39.5  
IDSQ = 4.0A  
41.5 42.5  
33  
ηADD Power Added Efficiency @ P1dB  
%
A
37  
1.1  
35  
Zs = ZL  
IDS  
GL  
IM3  
Drain Current at P1dB  
Linear Gain  
1.5  
-42  
3.5  
2.2  
3.0  
4.4 6.0  
9.0  
50 ohms  
dB  
9.0 10.0  
8.5  
9.5  
8.0  
3rd Order Intermodulation Distortion3 at  
VDS = I0V  
-XDL Pout = 26 dBm SCL2, IDSQ = 0.5 x IDSS  
Option Pout = 29 dBm SCL2, IDSQ = 0.5 x IDSS  
dBc  
dBc  
-45  
f1 = 6.44 GHz  
f2 = 6.45 GHZ  
2 Equal Tones  
-45  
4.5  
-42  
7.0  
Only Pout = 31.5 dBm SCL2, IDSQ = 0.5 x IDSS dBc  
-45 -42  
9.2 14.0  
IDSS  
VP  
Saturated Drain Current, VGS = 0 V  
Pinch Off Voltage  
IDS = 15 mA  
A
1.0  
2.3  
2.0  
4.0  
V
V
V
-3.5 -2.0 -0.5  
VDS = 2.5 V  
IDS = 30 mA  
IDS = 60 mA  
-3.5 -2.0 -0.5  
-3.5 -2.2 -0.5  
BVDGO Drain - Gate Breakdown Voltage  
IDG = 15 mA  
V
V
V
20  
22  
IDG = 30 mA  
IDG = 60 mA  
20  
22  
20  
22  
gm  
Transconductance  
IDS = I A  
mS  
mS  
mS  
1300  
5.0  
IDS = 2 A  
IDS = 4 A  
2600  
2.5  
5200  
1.3 1.5  
RTH(CH-C) Thermal Resistance (Channel to Case) °C/W  
T(CH-C) Channel Temperature Rise4  
°C  
Notes:  
6.0  
48  
3.0  
48  
60  
3. Maximum Spec Applies to -XDL Option Only.  
4. T(CH-C) = TCH - TC = 10 V x IDSQ x RTH (CH-C) MAX.  
1. P1dB: Ouptut Power at the 1dB Gain Compression Point.  
2. SCL: Single Carrier Level.  
California Eastern Laboratories