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NESG270034-T1-AZ 参数 Datasheet PDF下载

NESG270034-T1-AZ图片预览
型号: NESG270034-T1-AZ
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗RF晶体管中等输出功率放大( 2 W ) 3 - pin电源MINIMOLD ( 34 PKG ) [NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)]
分类和应用: 晶体晶体管输出元件
文件页数/大小: 11 页 / 330 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG270034  
S-PARAMETERS  
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form  
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.  
Click here to download S-parameters.  
[RF and Microwave] [Device Parameters]  
URL http://www.ncsd.necel.com/  
PA EVALUATION CIRCUIT TYPICAL CHARACTERISTICS  
OUTPUT POWER, COLLECTOR  
CURRENT, COLLECTOR EFFICIENCY  
vs. INPUT POWER  
35  
30  
25  
20  
15  
10  
1 000  
800  
600  
400  
200  
0
V
CE = 6 V, f = 460 MHz  
I
C (set) = 30 mA  
P
out  
η
I
C
η
C
0
5
10  
15  
20  
25  
Input Power Pin (dBm)  
Remark The graph indicates nominal characteristics.  
5
Preliminary Data Sheet PU10577EJ01V0DS