SILICON TRANSISTOR
NE681 SERIES
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
E
• LOW NOISE FIGURE:
1.2 dB at 1 GHz
B
1.6 dB at 2 GHz
• HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
35 (MICRO-X)
00 (CHIP)
• LOW COST
DESCRIPTION
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
useasinglematchingpointtosimultaneouslyachievebothlow
noise and high gain.
19 (3 PIN ULTRA
SUPER MINI MOLD)
18 (SOT 343 STYLE)
30 (SOT 323 STYLE)
39 (SOT 143 STYLE)
33 (SOT 23 STYLE)
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
V
CE = 3 V, IC = 5 mA
MSG
20
10
0
MAG
3.0
39R (SOT 143R STYLE)
2.0
1.0
G
A
NF
0.5
1.0
2.0
3.0
Frequency, f (GHz)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Date Published: June 28, 2005
CEL [ CALIFORNIA EASTERN LABS ]
