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NE4210S01-T1B 参数 Datasheet PDF下载

NE4210S01-T1B图片预览
型号: NE4210S01-T1B
PDF下载: 下载PDF文件 查看货源
内容描述: 超低噪声HJ FET [SUPER LOW NOISE HJ FET]
分类和应用: 晶体晶体管放大器
文件页数/大小: 7 页 / 252 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NE4210S01-T1B的Datasheet PDF文件第2页浏览型号NE4210S01-T1B的Datasheet PDF文件第3页浏览型号NE4210S01-T1B的Datasheet PDF文件第4页浏览型号NE4210S01-T1B的Datasheet PDF文件第5页浏览型号NE4210S01-T1B的Datasheet PDF文件第6页浏览型号NE4210S01-T1B的Datasheet PDF文件第7页  
NEC's SUPER LOW NOISE HJ FET NE4210S01  
OUTLINE DIMENSION (Units in mm)  
FEATURES  
• SUPER LOW NOISE FIGURE:  
0.50 dB TYP at f = 12 GHz  
PACKAGE OUTLINE SO1  
2.0 – 0.2  
• HIGH ASSOCIATED GAIN:  
13.0 dB TYP at f = 12 GHz  
• GATE LENGTH: LG 0.20 µm  
• GATE WIDTH: WG = 160 µm  
2.0 – 0.2  
1
2
0.5  
TYP  
L
DESCRIPTION  
2.0–0.2  
4
NEC'S NE4210S01 is a pseudomorphic Hetero-Junction FET  
thatusesthejunctionbetweenSi-dopedAIGaAsandundoped  
InGaAs to create very high mobility electrons. The device  
features mushroom shaped TiAl gates for decreased gate  
resistance and improved power handling. Its excellent low  
noise figure and high associated gain make it suitable for DBS  
and commercial systems. The NE4210S01 is housed in a low  
cost plastic package which is available in tape and reel.  
3
1. Source  
2. Drain  
3. Source  
4. Gate  
0.65 TYP  
1.9 – 0.2  
1.6  
NEC's stringent quality assurance and test procedures assure  
the highest reliability and performance.  
0.125 – 0.05  
1.5 MAX  
0.4 MAX  
4.0 – 0.2  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
NE4210S01  
S01  
SYMBOLS  
GA  
PARAMETERS AND CONDITIONS  
Associated Gain1, VDS = 2 V, ID = 10 mA, f = 12 GHz  
Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz  
Transconductance, VDS = 2 V, ID = 10 mA  
UNITS  
MIN  
TYP  
13.0  
0.50  
55  
MAX  
dB  
dB  
mS  
mA  
V
11.0  
NF  
0.70  
gm  
40  
15  
IDSS  
VP  
Saturated Drain Current, VDS = 2 V, VGS = 0 V  
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA  
Gate to Source Leakage Current, VGS = -3 V  
40  
70  
-2.0  
10  
-0.2  
-0.7  
0.5  
IGSO  
µA  
Note:  
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually  
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line  
as a "go-no-go" screening tuned for the "generic" type but not each specimen.  
California Eastern Laboratories