NEC's SUPER LOW NOISE HJ FET NE4210S01
OUTLINE DIMENSION (Units in mm)
FEATURES
• SUPER LOW NOISE FIGURE:
0.50 dB TYP at f = 12 GHz
PACKAGE OUTLINE SO1
2.0 – 0.2
• HIGH ASSOCIATED GAIN:
13.0 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 µm
• GATE WIDTH: WG = 160 µm
2.0 – 0.2
1
2
0.5
TYP
L
DESCRIPTION
2.0–0.2
4
NEC'S NE4210S01 is a pseudomorphic Hetero-Junction FET
thatusesthejunctionbetweenSi-dopedAIGaAsandundoped
InGaAs to create very high mobility electrons. The device
features mushroom shaped TiAl gates for decreased gate
resistance and improved power handling. Its excellent low
noise figure and high associated gain make it suitable for DBS
and commercial systems. The NE4210S01 is housed in a low
cost plastic package which is available in tape and reel.
3
1. Source
2. Drain
3. Source
4. Gate
0.65 TYP
1.9 – 0.2
1.6
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
0.125 – 0.05
1.5 MAX
0.4 MAX
4.0 – 0.2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
NE4210S01
S01
SYMBOLS
GA
PARAMETERS AND CONDITIONS
Associated Gain1, VDS = 2 V, ID = 10 mA, f = 12 GHz
Noise Figure1, VDS = 2 V, ID = 10 mA, f = 12 GHz
Transconductance, VDS = 2 V, ID = 10 mA
UNITS
MIN
TYP
13.0
0.50
55
MAX
dB
dB
mS
mA
V
11.0
NF
0.70
gm
40
15
IDSS
VP
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA
Gate to Source Leakage Current, VGS = -3 V
40
70
-2.0
10
-0.2
-0.7
0.5
IGSO
µA
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not each specimen.
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
