IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
V
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
80
60
8.0
700
800
V
mA
mW
deg C
PC
Tj, Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
CSC1008 CSA708
UNIT
V
V
V
nA
nA
Collector -Base Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
VCBO
VCEO
VEBO
ICBO
IEBO
hFE*
IC=100uA.IE=0
IC=10mA,IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=50mA,VCE=2V
>80
>60
>80
>60
>8.0
>8.0
<100
<100
40-400
<0.4
<100
<100
40-240
<0.7
Collector Emitter Saturation Voltage VCE(Sat)* IC=500mA,IB=50mA
Base Emitter Saturation Voltage
V
V
VBE(Sat) * IC=500mA,IB=50mA
<1.1
<1.1
DYNAMIC CHARACTERISTICS
Transition Frequency
Out-Put Capacitance
ft
Cob
IC=50mA, VCE=10V
VCB=10V, IE=0
f=1MHz
>30
typ8
typ50
typ13
MHz
pF
*hFE CLASSIFICATION
CSC1008 R : 40 - 80
CSA708 R : 40 - 80
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G : 200-400
*Pulse Test: PW=350us, Duty Cycle=2%
Continental Device India Limited
Page 1 of 3
Data Sheet
CDIL [ Continental Device India Limited ]
