Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
Q
NPN HIGH VOLTAGE HIGH SPEED SILICON POWER TRANSISTOR
BUF508A
TO-220FP Fully Isolated
Plastic Package
Applications
High voltage, high - speed switching transistor in TO - 220FP package envelope intended
for use in horizontal deflection of colour television circuits.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
Collector Emitter Voltage Peak Value; VBE=O
Collector Emitter Voltage
Collector Current (DC)
Collector Current (Peak)
Base Current (DC)
Base Current (Peak)
Reverse Base Current
(DC or average over any 20ms period)
Reverse Base Current *(Peak Value)
Power Dissipation upto Tmb=25ºC
Operating & Storage Junction
Temperature Range
*Turn off current
SYMBOL
VCESM
V
CEO
I
C
I
CM
VALUE
1500
700
8.0
15
4.0
6.0
100
UNIT
V
V
A
A
A
A
mA
I
B
I
BM
- IB(AV)
I
BM
Ptot
T
j, Tstg
5.0
60
-65 to +150
A
W
ºC
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
I
CES
VCE=VCESM max, VBE=0
Collector Cut off Current **
Tj=125ºC
VCE=VCESM max, VBE=0
MIN
-
MAX
1.0
UNIT
mA
Emitter Cut off Current
Collector Emitter (sus) Voltage
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
I
EBO
V
CEO (sus)
V
CE (Sat)
VBE(Sat)
V
EB
=6V,I
C
=0
I
C
=100mA, I
B
=0, L=25mH
I
C
=4.5A, I
B
=2A
I
C
=4.5A, I
B
=2A
-
-
700
-
-
2.0
10
-
1.0
1.3
mA
mA
V
V
V
DYNAMIC CHARACTERISTISC
Transition Frequency
ft
Collector Capacitance
Cc
**Measured with half - sinewave voltage (curve tracer)
IC=0.1A, VCE=5V, f=5MHz
IE=ie=0, VCB=10V, f=1MHz
TYP 7.0
TYP 125
MHz
pF
Continental Device India Limited
Data Sheet
Page 1 of 3
CDIL [ Continental Device India Limited ]
