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BU109 参数 Datasheet PDF下载

BU109图片预览
型号: BU109
PDF下载: 下载PDF文件 查看货源
内容描述: NPN高压硅功率晶体管 [NPN HIGH VOLTAGE SILICON POWER TRANSISTOR]
分类和应用: 晶体晶体管功率双极晶体管高压局域网
文件页数/大小: 3 页 / 191 K
品牌: CDIL [ Continental Device India Limited ]
 浏览型号BU109的Datasheet PDF文件第2页浏览型号BU109的Datasheet PDF文件第3页  
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L-000019.3
NPN HIGH VOLTAGE SILICON POWER TRANSISTOR
BU109
TO-3
Metal Can Package
HORIZONTAL DEFLECTION OUTPUT STAGE OF TVs and CRTs
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Emitter Voltage (V
BE
= -1.5V)
Collector Current
Collector Peak Current (Repetitive)
Collector Peak Current (t=10ms)
Base Current
Total Power Dissipation@ Tc<25ºC
Juntion Temperature
Storage Temperature
THERMAL RESISTANCE
Junction to Ambient
Junction to Case
SYMBOL
V
CEO
V
CBO
V
EBO
V
CEV
I
C
I
CM
I
CM
I
B
P
tot
T
j
T
stg
VALUE
150
330
6.0
330
7.0
10.0
15.0
4.0
60
150
-65 To+150
UNITS
V
V
V
V
A
A
A
A
W
ºC
ºC
R
th(j-a)
R
th(j-c)
70
2.08
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
Collector Cut off Current
SYMBOL
I
CES
I
CES
I
CES
Emitter Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Transition Frequency
Turn off Time
I
EBO
V
CE(Sat)
*
V
BE(Sat)
*
f
T
t
off
TEST CONDITION
V
CE
=330V, V
BE
=0
V
CE
=200V, V
BE
=0
V
CE
=200V, V
BE
=0
T
C
=150ºC
V
EB
=6V, I
C
=0
I
C
=5A,I
B
=0.5A
I
C
=5A,I
B
=0.5A
I
C
=0.5A, V
CE
=10V
I
C
=5A, I
B
end = 0.5A
MIN
MAX
5.0
100
1.0
1.0
1.0
1.2
10
0.75
UNITS
mA
µA
mA
mA
V
V
MHz
us
*Pulse Test: Pulse Duration=300ms, Duty Cycle =1.5%
Continental Device India Limited
Data Sheet
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