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BF495 参数 Datasheet PDF下载

BF495图片预览
型号: BF495
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅平面外延射频晶体管 [NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS]
分类和应用: 晶体晶体管射频局域网
文件页数/大小: 4 页 / 68 K
品牌: CDIL [ Continental Device India Limited ]
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Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
BF494
BF495
TO-92
Plastic Package
High Voltage Video Transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current (DC)
Collector Current(peak value)
Total Power dissipation up to
Tamb = 25ºC
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to ambient
V
CEO
V
CBO
V
EBO
I
C
I
CM
P
tot
T
j
, T
stg
Value
20
30
5
30
30
300
-55 to +150
UNITS
V
V
V
mA
mA
mW
mW/ºC
ºC
R
th(j-a)
420
K/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Min
I
CBO
V
CB
=20V,I
E
=0
Collector Cut- off Current
Collector Cut - off Current
EmitterCut off Current
Base Emitter Voltage
DC Current Gain
BF494
BF494A
BF494B
BF 495
BF 495C
BF 495D
I
CBO
I
EBO
V
BE(ON)
h
FE *
V
CB
=20V,I
E
=0
Ta =150 ºC
V
EB
=4V, I
C
=0
V
CE
=10V,I
C
=1mA
I
C
=1mA,V
CE
=10V
0.65
67
200
110
35
65
40
Max
500
4.0
500
0.74
221
500
215
125
135
85
UNITS
nA
µA
nA
V
Continental Device India Limited
Data Sheet
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