SILICON PLANAR EPITAXIAL TRANSISTORS
BC 446, A, B
BC 448, A, B
BC 450, A, B
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
BV
CEO
* I
C
=1mA,I
B
=0
Collector Emitter BreakdownVoltage
BC446
60
BC448
80
BC450
100
BV
CBO
I
C
=100uA, I
E
=0
Collector Base Breakdown Voltage
BC446
60
BC448
80
BC450
100
BV
EBO
I
E
=10uA, I
C
=0
5
Emitter Base Breakdown Voltage
I
CBO
Collector-Cut off Current
BC446
BC448
BC450
DC Current Gain
NON SUFFIX
A
B
NON SUFFIX
A
B
NON SUFFIX
A
B
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
V
CE(sat)
I
C
=100mA,I
B
=10mA
V
BE(sat)
V
BE(on)
I
C
=100mA,I
B
=10mA
I
C
=2mA,V
CE
=5V
I
C
=100mA,V
CE
=5V*
h
FE
*
I
C
=2mA,V
CE
=5V
50
120
180
50
100
160
50
60
90
V
CB
=40V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=80V, I
E
=0
TYP
MAX
UNITS
V
V
V
V
V
V
V
100
100
100
nA
nA
nA
460
220
460
I
C
=2mA,V
CE
=5V
I
C
=100mA,V
CE
=5V
0.25
0.85
0.55
0.70
1.2
V
V
V
V
DYNAMICS CHARACTERISTICS
Transition Frequency
f
T
I
C
=50mA, V
CE
=5V
f=100MHz
Pulse Test : Pulse width < 300µs, Duty Cycle <2%.
100
MHz
Continental Device India Limited
Data Sheet
Page 2 of 4
CDIL [ Continental Device India Limited ]
