SILICON PLANAR SCHOTTKY DIODES
BAT64,
BAT64-04
BAT64-05, BAT64-06
SOT-23
Formed SMD Package
ELECTRICAL CHARACTERISTICS (T
a
=25º C unless specified otherwise) (per diode)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
V
(BR)
I
(BR)
=10µA
Reverse Breakdown Voltage
40
I
R
V
R
=30V
Reverse Current
V
R
=30, T
a
=85ºC
V
F
I
F
=1mA
Forward Voltage
0.25
I
F
=10mA
0.31
I
F
=30mA
0.37
I
F
=100mA
0.50
C
T
V
R
=1V, f=1MHz
Diode Capacitance
Reverse Recovery Time
BAT64_06REV081105E
MAX
2
200
0.32
0.43
0.52
0.75
7.00
5.00
UNIT
V
µA
µA
V
V
V
V
pF
ns
t
rr
I
F
=10mA, I
R
=10mA,
measured I
R
=1mA,
R
L
=100Ω
Continental Device India Limited
Data Sheet
Page 2 of 4