NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N3019
2N3020
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
2N3020
2N3019
SMALL SIGNAL CHARACTERISTICS
Small Signal Current Gain
2N3019
2N3020
Transition Frequency
2N3019
2N3020
Output Capacitance
Input Capacitance
Noise Figure
2N3019
Collector Base Time Constant
rbb'cb'c
C
ob
C
ib
NF
f
T
I
C
=50mA, V
CE
=10V
f=20MHz
V
CB
=10V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
I
C
=100µA, V
CE
=10V
R
s
=1KΩ,f=1KHz
I
C
=10mA,V
CB
=10V, f=4MHz
f=1MHz
| h
fe
|
I
C
=1mA, V
CE
=5V, f=1KHz
SYMBOL
h
FE
*
h
FE
*
h
FE
*
h
FE
*
h
FE
*
h
FE
*
TEST CONDITION
I
C
=0.1mA,V
CE
=10V
I
C
=10mA,V
CE
=10V
I
C
=150mA,V
CE
=10V
I
C
=500mA,V
CE
=10V
I
C
=1A,V
CE
=10V
I
C
=150mA,V
CE
=10V
Tc= -55ºC
MIN
MAX
UNITS
50
30
90
40
100
40
50
30
15
15
40
100
120
300
120
100
80
30
400
200
100
80
12
60
4
400
MHz
MHz
pF
pF
dB
ps
*Pulse Test: Pulse Width <300µs, Duty Cycle <1.0%
µ
Continental Device India Limited
Data Sheet
Page 2 of 4
CDIL [ Continental Device India Limited ]
