SILICON PLANAR ZENER DIODES
1N5223B to 1N5279B
2.7V to 180V
DO- 35
Glass Axial Package
ELECTRICAL CHARACTERISTICS (T
a
=25ºC unless specified otherwise)
Forward Voltage at I
F
=200mA
V
F
<1.1 V
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance
Device
(Note 1)
Nominal
Voltage
V
Z
@ I
ZT
Test
Current
I
ZT
Max Zener
Impedance
A & B Suffix only
(Note 2)
Z
ZT
@
Z
ZK
@
I
ZT
I
ZK
=0.25mA
Ω
Ω
400
2300
500
2600
750
3000
900
4000
1100
4500
1300
4500
1500
5000
1700
5500
1900
5500
2200
6000
Max Reverse Leakage Current
I
R
at V
R
Max Zener
Voltage
Temp. Coeff.
θ
Vz(Note 3)
(A&B Suffix only)
α
V
Z
(% /ºC)
0.099
0.099
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
NOTE 1:
NOTE 2:
V
91
100
110
120
130
140
150
160
170
180
mA
1.4
1.3
1.1
1.0
0.95
0.90
0.85
0.80
0.74
0.68
µ
A
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
69
76
84
91
99
106
114
122
129
137
The electrical characteristics are measured after allowing the device to stabilize for
20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.
The zener impedance is derived from the 50 Hz AC voltage, which results when AC current
having an RMS value equal to 10% of the DC zener current (I
ZT
or I
ZK
) is superimposed
on I
ZT
or I
ZK
Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve, thereby, eliminating unstable units.
Temperature coefficient (θV
z
).
θ
Test conditions for temperature coefficient are as follows.
a. I
ZT
=7.5mA, T
j
=25ºC
T2=125ºC(1N5223A, B thru 1N5242A, B )
b. I
ZT
=Rated I
ZT
, T
J
=25ºC
T2=125ºC(1N5243A, B thru 1N5279A, B )
Device to be temperature stabilized with current applied prior to reading brekdown voltage
at the specified ambient Rwmerature
NOTE 3:
1N5223B_5279B Rev_2 080605E
Continental Device India Limited
Data Sheet
Page 3 of 5
CDIL [ Continental Device India Limited ]
