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1N645-1 参数 Datasheet PDF下载

1N645-1图片预览
型号: 1N645-1
PDF下载: 下载PDF文件 查看货源
内容描述: 硅整流 [SILICON RECTIFIER]
分类和应用: 整流二极管
文件页数/大小: 2 页 / 71 K
品牌: CDI-DIODE [ COMPENSATED DEUICES INCORPORATED ]
 浏览型号1N645-1的Datasheet PDF文件第2页  
• AVAILABLE IN
JAN, JANTX,
AND
JANTXV
PER MIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
1N645-1
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25°C
150 mA @ 150°C
Derating: 2.0 mA/°C From 25°C to 150°C
6.0 mA/°C From 150°C to 175°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
TYPE
VRSM
V RWM
I FSM
TP = 1/120 s
TA = 25°C
V (pk)
1N645-1
270
V (pk)
225
A
5
V DC
0.8 - 1.0
pF
20
VF
@400mA
CAP @
V R = 4V
FIGURE 1
TYPE
I R1 at V RWM I R2 at V RWM I R3 at V RSM
TA = 25°C
TA = 150°C
TA = 25°C
µA
1N645-1
0.05
µA
25
µA
50
DESIGN DATA
CASE:
Hermetically sealed glass
case. DO – 35 outline.
LEAD MATERIAL:
Copper clad steel.
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
250 ˚C/W maximum
THERMAL IMPEDANCE: (ZO
JX): 35
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
ANY.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com