CAT4134
ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
V
SW voltage
20
8
VIN voltage
V
EN, FLASH, RSET, RFLASH voltage
LED1, LED2 voltage
VIN + 0.6V
8
V
V
Output Current per Channel
Storage Temperature Range
Junction Temperature Range
Lead Temperature
300
mA
°C
°C
°C
V
-65 to +160
-40 to +125
300
ESD Rating – Human Body Model (HBM)
2000
RECOMMENDED OPERATING CONDITIONS
Parameter
Range
Units
V
VIN
2.8 to 4.2
-40 to +85
25 to 250
5 to 50
Ambient Temperature Range
Flash mode current per channel
Movie mode current per channel
°C
mA
mA
ELECTRICAL OPERATING CHARACTERISTICS
Over recommended operating conditions unless specified otherwise.
VIN = 3.6V, EN = VIN and at ambient temperature of 25ºC.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
IQ
Quiescent Current
VLED1 > 0.5V, VLED2 > 0.5V
100
250
µA
(not switching)
ISD
Shutdown Current
EN = 0V
1
µA
A
ISW
Switch Current Limit
Movie Mode (FLASH = Low)
Flash Mode (FLASH = High)
0.5
1.7
1
2
RSW
Switch Resistance
ISW = 1000mA
0.3
0.5
5
Ω
ILK
Switch Leakage Current
Oscillator Frequency
Switch Off, VSW = 5V
µA
FOSC
Movie Mode
Flash Mode
1.2
0.9
MHz
VOVP
η
OVP pin threshold
Efficiency
1.10
1.20
85
1.30
2.2
V
%
ºC
V
OUT = 10V, Load = 200mA
TSD
Thermal Shutdown
Thermal Hysteresis
150
THYST
VUVLO
20
ºC
V
Undervoltage Lock Out
(UVLO) Threshold
Disabled when VIN < VUVLO
1.9
EN LOGIC CONTROL INPUT
VSDHI
VSDLO
Logic High Threshold
Logic Low Threshold
EN > VSDHI Enables Device
EN = 3V
0.7
0.7
1.5
40
V
0.4
ISDBIAS Input Bias current
10
µA
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice.
2
Doc. No. 5021 Rev. A
CATALYST [ CATALYST SEMICONDUCTOR ]
