CAT28C010
Advanced Information
MODE SELECTION
Mode
CE
L
WE
OE
L
I/O
DOUT
DIN
Power
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
Read
H
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
L
H
L
X
H
H
DIN
H
X
X
High-Z
High-Z
H
CAPACITANCE T = 25°C, f = 1.0 MHz, V
= 5V
A
CC
Symbol
Test
Max.
10
Units
pF
Conditions
(1)
CI/O
Input/Output Capacitance
Input Capacitance
VI/O = 0V
VIN = 0V
(1)
CIN
6
pF
A.C. CHARACTERISTICS, Read Cycle
VCC=5V + 10%, Unless otherwise specified
28C010-12
28C010-15
Symbol Parameter
Min. Max. Min.
Max. Units
tRC
tCE
tAA
tOE
Read Cycle Time
120
150
ns
CE Access Time
120
120
50
150
150
55
ns
ns
ns
ns
ns
ns
ns
ns
Address Access Time
OE Access Time
(1)
tLZ
CE Low to Active Output
OE Low to Active Output
CE High to High-Z Output
OE High to High-Z Output
Output Hold from Address Change
0
0
0
0
(1)
tOLZ
(1)(2)
tHZ
50
50
50
50
(1)(2)
tOHZ
(1)
tOH
0
0
Power-Up Timing
Symbol
Parameter
Min.
Max
100
10
Units
(1)
tPUR
Power-up to Read Operation
Power-up to Write Operation
µs
(2)
tPUW
5
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
Doc. No. 25093-00 7/99 P-1
4
CATALYST [ CATALYST SEMICONDUCTOR ]
