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XSD310 参数 Datasheet PDF下载

XSD310图片预览
型号: XSD310
PDF下载: 下载PDF文件 查看货源
内容描述: 高速模拟N通道DMOS FET的好转-Resistance [High-Speed Analog N-Channel DMOS FETs Improved On -Resistance]
分类和应用:
文件页数/大小: 3 页 / 39 K
品牌: CALOGIC [ CALOGIC, LLC ]
 浏览型号XSD310的Datasheet PDF文件第1页浏览型号XSD310的Datasheet PDF文件第3页  
SD310 / SD312 / SD314  
CORPORATION  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SD310 SD312 SD314 UNIT  
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA  
Total Device Dissipation at 25oC Case Temperature . . . 1.2W  
Storage Temperature Range . . . . . . . . . . . . . . -65o to +200oC  
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC  
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC  
VDS  
VSD  
VDB  
VSB  
VGS  
VGB  
VGD  
Drain-to-source  
+30  
+10  
+10  
+15  
+15  
±40  
±40  
±40  
+20  
+20  
+25  
+25  
±40  
±40  
±40  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Vdc  
Source-to-drain* +10  
Drain-to-body  
Source-to-body  
Gate-to-source  
Gate-to-body  
Gate-to-drain  
+30  
+15  
±40  
±40  
±40  
DC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless other specified.)  
SD310  
SD312  
SD314  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
BREAKDOWN VOLTAGE  
V
GS = VBS = 0V, ID = 10µA  
30  
10  
10  
15  
15  
35  
25  
BVDS  
Drain-to-source  
10  
10  
15  
15  
25  
20  
20  
25  
25  
25  
VGS = VBS = -5V, IS = 10nA  
V
BVSD  
BVDB  
BVSB  
Source-to drain  
Drain-to-body  
Source-to-body  
VGD = VBD = -5V, ID = 10nA  
VGB = 0V, source OPEN, ID = 10nA  
VGB = 0V, drain OPEN, IS = 10µA  
LEAKAGE CURRENT  
1
1
10  
10  
1
1
10  
10  
V
GS = VBS = -5V, VDS = +10V  
VGS = VBS = -5V, VDS = +20V  
GS = VBD = -5V, VSD = +10V  
IDS (OFF)  
ISD (OFF)  
Drain-to-source  
1
1
10  
nA  
V
Source-to-drain  
VGS = VBD = -5V, VSD = +20V  
VDB = VSB = 0V, VGS = ±40V  
VDS = VGS = VT, IS = 1µA, VSB = 0V  
10  
IGBS  
VT  
Gate  
0.1  
0.1  
0.1  
Threshold voltage  
0.5 1.0 2.0 0.5 1.0 2.0 0.5 1.0 2.0  
V
I
D = 1.0mA, VSB = 0, VGS = +5V  
30  
20  
15  
50  
35  
25  
30  
20  
15  
50  
35  
30  
20  
15  
50  
35  
Drain-to-source  
resistance  
rDS (ON)  
ID = 1.0mA, VSB = 0, VGS = +10V  
ID = 1.0mA, VSB = 0, VGS = +15V  
AC ELECTRICAL CHARACTERISTICS  
SD310  
SD312  
SD314  
SYMBOL  
PARAMETER  
UNITS  
TEST CONDITIONS  
MIN TYP MAX MIN TYP MAX MIN TYP MAX  
Forward  
transconductance  
VDS = 10V, VSB = 0V, ID = 20mA,  
f = 1kHz  
gfs  
15  
20  
15  
20  
15  
20  
mmhos  
SMALL SIGNAL CAPACITANCES (See capacitance model)  
C(GS+GD+GB) Gate node  
2.4 3.7  
1.3 1.7  
3.5 4.5  
0.3 0.7  
2.4 3.7  
1.3 1.7  
3.5 4.5  
0.3 0.7  
2.4 3.7  
1.3 1.7  
3.5 4.5  
0.3 0.7  
C(GD+DB)  
C(GS+SB)  
CDG  
Drain node  
VDS = 10V, f = 1MHz  
pF  
VGS = VBS = -15V  
Source node  
Reverse transfer