SD310 / SD312 / SD314
CORPORATION
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SD310 SD312 SD314 UNIT
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation at 25oC Case Temperature . . . 1.2W
Storage Temperature Range . . . . . . . . . . . . . . -65o to +200oC
Lead Temperature (1/16" from case for 10 sec.). . . . . . 300oC
Operating Temperature Range . . . . . . . . . . . -55oC to +125oC
VDS
VSD
VDB
VSB
VGS
VGB
VGD
Drain-to-source
+30
+10
+10
+15
+15
±40
±40
±40
+20
+20
+25
+25
±40
±40
±40
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Source-to-drain* +10
Drain-to-body
Source-to-body
Gate-to-source
Gate-to-body
Gate-to-drain
+30
+15
±40
±40
±40
DC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless other specified.)
SD310
SD312
SD314
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
V
GS = VBS = 0V, ID = 10µA
30
10
10
15
15
35
25
BVDS
Drain-to-source
10
10
15
15
25
20
20
25
25
25
VGS = VBS = -5V, IS = 10nA
V
BVSD
BVDB
BVSB
Source-to drain
Drain-to-body
Source-to-body
VGD = VBD = -5V, ID = 10nA
VGB = 0V, source OPEN, ID = 10nA
VGB = 0V, drain OPEN, IS = 10µA
LEAKAGE CURRENT
1
1
10
10
1
1
10
10
V
GS = VBS = -5V, VDS = +10V
VGS = VBS = -5V, VDS = +20V
GS = VBD = -5V, VSD = +10V
IDS (OFF)
ISD (OFF)
Drain-to-source
1
1
10
nA
V
Source-to-drain
VGS = VBD = -5V, VSD = +20V
VDB = VSB = 0V, VGS = ±40V
VDS = VGS = VT, IS = 1µA, VSB = 0V
10
IGBS
VT
Gate
0.1
0.1
0.1
Threshold voltage
0.5 1.0 2.0 0.5 1.0 2.0 0.5 1.0 2.0
V
I
D = 1.0mA, VSB = 0, VGS = +5V
30
20
15
50
35
25
30
20
15
50
35
30
20
15
50
35
Drain-to-source
resistance
rDS (ON)
Ω
ID = 1.0mA, VSB = 0, VGS = +10V
ID = 1.0mA, VSB = 0, VGS = +15V
AC ELECTRICAL CHARACTERISTICS
SD310
SD312
SD314
SYMBOL
PARAMETER
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
Forward
transconductance
VDS = 10V, VSB = 0V, ID = 20mA,
f = 1kHz
gfs
15
20
15
20
15
20
mmhos
SMALL SIGNAL CAPACITANCES (See capacitance model)
C(GS+GD+GB) Gate node
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
2.4 3.7
1.3 1.7
3.5 4.5
0.3 0.7
C(GD+DB)
C(GS+SB)
CDG
Drain node
VDS = 10V, f = 1MHz
pF
VGS = VBS = -15V
Source node
Reverse transfer