3N165 / 3N166
CORPORATION
ELECTRICAL CHARACTERISTICS
(Continued) (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
g
fs
g
os
C
iss
C
rss
C
oss
R
E
(Y
fs
)
PARAMETER
Forward Transconductance
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Common Source Forward Transconductance
1200
MIN
1500
MAX
3000
300
3.0
0.7
3.0
µs
V
DS
= -15V, I
D
= -10mA, f = 100MHz (Note 4)
pF
V
DS
= -15V, I
D
= -10mA, f = 1MHz (Note 4)
UNITS
µS
TEST CONDITIONS
V
DS
= -15V, I
D
= -10mA, f = 1kHz
MATCHING CHARACTERISTICS
SYMBOL
Y
fs1
/ Y
fs2
V
GS1-2
∆V
GS1−2
∆T
NOTES: 1.
2.
3.
4.
3N165
MIN
0.90
MAX
1.0
100
100
mV
µV/
o
C
UNITS
TEST CONDITIONS
V
DS
= -15V, I
D
= -500µA, f = 1kHz
V
DS
= -15V, I
D
= -500µA
V
DS
= -15V, I
A
= -500µA
T
A
= -55
o
C to +25
o
C
PARAMETER
Forward Transconductance Ratio
Gate Source Threshold Voltage Differential
Gate Source Threshold Voltage Differential
Change with Temperature
See handling precautions on 3N170 data sheet.
Per transistor.
Devices must not be tested at
±125V
more than once, nor longer than 300ms.
For design reference only, not 100% tested.
CALOGIC [ CALOGIC, LLC ]
