2N5114 – 2N5116
CORPORATION
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise specified) (Continued)
SYMBOL
PARAMETER
Drain Current at Zero Gate Voltage
(Note 1)
Forward Gate-Source Voltage
Drain-Source ON Voltage
Static Drain-Source ON Resistance
Small-Signal Drain-Source ON
Resistance
Common-Source Input Capacitance
(Note 2)
Common-Source Reverse Transfer
Capacitance (Note 2)
2N5114
MIN
MAX
-30
-90
-1
-1.3
75
75
25
2N5115
MIN
MAX
-15
-60
-1
-0.8
100
100
25
2N5116
MIN
MAX
-5
-25
-1
-0.6
150
150
25
pF
7
7
7
Ω
V
UNITS
TEST CONDITIONS
V
GS
= -0
V
DS
= -18V (2N5114)
V
DS
= -15V (2N5115)
V
DS
= -15V (2N5116)
I
G
= -1mA, V
DS
= 0
V
GS
= 0
I
D
= -15mA (2N5114)
I
D
= -7mA (2N5115)
I
D
= -3mA (2N5116)
V
GS
= 0, I
D
= -1mA
V
GS
= 0, I
D
= 0, f = 1kHz
V
DS
= -15V, V
GS
= 0,
f = 1mHz
V
DS
= 0
V
GS
= 12V (2N5114)
V
GS
= 7V (2N5115)
V
GS
= 5V (2N5116)
f = 1mHz
I
DSS
V
GS(f)
V
DS(on)
r
DS(on)
r
ds(on)
C
iss
mA
C
rss
NOTES 1.
Pulse test; duration = 2ms.
2.
For design reference only, not 100% tested.
V
GG
V
DD
TEST CONDITIONS
2N5114
V
DD
V
GG
R
L
R
G
I
D(ON)
V
IN
-10V
20V
430Ω
100Ω
-15mA
-12V
2N5115
-6V
12V
910Ω
220Ω
-7mA
-7V
2N5116
-6V
8V
2KΩ
390Ω
-6V
V
DS(ON)
V
IN
t
d
10%
INPUT
1.2K
R
L
90%
t
OFF
t
r
90%
10%
t
r
OUTPUT
0040
0.1µF
V
IN
R
G
51Ω
1.2K
7.5K
10%
51Ω
SAMPLING
SCOPE
51Ω
-3mA
-5V
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10MΩ
INPUT CAPACITANCE 1.5pF
0050
TYPICAL PERFORMANCE CHARACTERISTICS
V
p
vs r
DS(ON)
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
V
p
vs I
DSS
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
V
p
vs g
fs
2.0
V
DS
= 0.1V
V
GS
= 0
2.0
V
DS
= 20V
V
GS
= 0
(pulsed)
2.0
V
DS
= 20V
V
GS
= 0
(pulsed)
V
p
(V)
V
p
(V)
1.0
0.9
0.8
0.7
0.6
0.5
10
30
100
300
1,000
1.0
0.9
0.8
0.7
0.6
0.5
1
3
10
30
100
V
p
(V)
1.0
0.9
0.8
0.7
0.6
0.5
1,000
3,000
10,000
30,000
100,000
r
DS(ON)
(ohms)
0060
t
DSS
(mA)
0070
g
fs
(µV)
0080
CALOGIC [ CALOGIC, LLC ]
