CSPEMI306A
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNITS
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
-65 to +150
100
°C
mW
mW
600
STANDARD OPERATING CONDITIONS
PARAMETER
RATING
UNITS
Operating Temperature Range
-40 to +85
°C
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ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
CONDITIONS
At 2.5V DC
At 2.5V DC
MIN
80
TYP
100
MAX
120
36
UNITS
Ω
R
Resistance
C
Capacitance
24
30
pF
TCR
TCC
Temperature Coefficient of Resistance
Temperature Coefficient of Capacitance
Diode Voltage (reverse bias)
1200
-300
ppm/°C
ppm/°C
V
V
I
=10µA
DIODE
5.5
DIODE
I
Diode Leakage Current (reverse bias)
V
=3.3V
DIODE
100
nA
LEAK
V
Signal Voltage
Positive Clamp
Negative Clamp
I
= 10mA
LOAD
SIG
5.6
-0.4
6.8
-0.8
9.0
-1.5
V
V
V
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
Notes 2,4 and 5
ESD
30
15
kV
kV
b) Contact Discharge per IEC 61000-4-2
Level 4
V
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Notes 2,3,4 and 5
CL
C
+10
-5
V
V
Negative Transients
f
Cut-off frequency
R = 100Ω, C = 30pF
58
MHz
Z
= 50Ω, Z
= 50Ω
LOAD
SOURCE
Note 1: TA=25°C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
© 2003 California Micro Devices Corp. All rights reserved.
10/10/03 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 L Tel: 408.263.3214
L
Fax: 408.263.7846
L
www.calmicro.com
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