PRELIMINARY
CM3212
DDR VDDQ and VTT Termination Voltage Regulator
Features
•
Two linear regulators
-Maximum 2A current from VDDQ
-Source and sink up to 2A VTT current
1.7V to 2.8V adjustable VDDQ output voltage
0.85V to 1.4V VTT output voltage (tracking at 50% of
VDDQ)
Buffered VREF output
500mV typical VDDQ dropout voltage at 2A
Excellent load and line regulation, low noise
Meets JEDEC DDR-I and DDR-II memory power spec
Linear regulator design requires no inductors and has
low external component count
Integrated power MOSFETs
Dual purpose ADJ/Shutdown pin
Enable VTT pin for sleep or suspend to RAM function
Built-in over-current limit and thermal shutdown for
VDDQ and VTT
Fast transient response
Low quiescent current
TDFN-8 RoHS compliant lead-free package
SOIC-8 RoHS compliant lead-free package
Product Description
T
he CM3212 is a dual-output low noise linear regulator
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
designed to meet SSTL-2 and SSTL-3 specifications
for DDR-SDRAM V
DDQ
supply and termination voltage
V
TT
supply. With integrated power MOSFETs the
CM3212 can source up to 2A of VDDQ continuous
current, and source or sink up to 2A VTT continuous
current. The typical dropout voltage for VDDQ is
500mV at 2A load current.
The CM3212 provides excellent full load regulation and
fast response to transient load changes. It also has
built-in over-current limits and thermal shutdown at
170°C.
The CM3212 supports Suspend-To-RAM (STR) and
ACPI compliance with Shutdown Mode which tri-states
VTT to minimize quiescent system current.
The CM3212 is available in a space saving TDFN-8
and SOIC-8 surface mount packages. Low thermal
resistance allows them to withstand high power
dissipation at 85°C ambient. The CM3212 can operate
over the industrial ambient temperature range of –40°C
to 85°C.
Applications
•
•
•
•
•
•
•
DDR memory and active termination buses
Desktop computers, servers
Residential and enterprise gateways
DSL modems
Routers and switches
DVD recorders, LCD TV and STB
3D AGP cards
Typical Application
V
IN
= 3.0V to 3.6V
C
IN
4.7μ/10V
cer
1
2
3
4
220μ/10V
V
DDQ
= 2.5V/2A
VDDQ
C
DDQ
4.7μ
10V
cer
VDDQ
220μ
10V
VIN
VTT
NC
GND
VDDQ
EN_VTT
8
7
6
5
S/D
R2
10k
R1
10k
C hip
S et
DL0
RT0
DLn
RTn
CM3212
ADJSD
VREF
REF
Memory
DDR
V
TT
= 1.25V/2A
C
TT
4.7μ
10V
cer
220μ/10V
C
REF
0.1μF/10V
© 2006 California Micro Devices Corp. All rights reserved.
01/04/07
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
l
Tel: 408.263.3214
l
Fax: 408.263.7846
l
www.cmd.com
1
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
