PRELIMINARY
CM3132
Specifications (cont’d)
(SEE NOTE1)
ELECTRICAL OPERATING CHARACTERISTICS
SYMBOL PARAMETER
General Parameters
CONDITIONS
MIN
TYP
MAX
UNITS
TOVER
THYST
ICCN
Shutdown Junction Temperature
-
-
150
25
-
-
°C
°C
µA
Junction Temp Hysterisis
IC in shutdown
Normal Mode VCC Supply
Current
EN_DDR = logic "0",
EN_CORE =logic "0"
400
800
ICCQ
Shutdown Mode VCC Supply
Current
EN_DDR = logic "1",
EN_CORE =logic "1"
2
10
µA
ISENSE IN SENSE_CORE Input Current
VSENSE_CORE=0.6V
VCORE=3.3V
0.1
1.0
µA
VIH
EN_DDR, EN_CORE Input
High Threshold
2.0
V
VIL
EN_DDR, EN_CORE Input
Low Threshold
VCORE=3.3V
0.4
1.8
V
V
UVLO
Under Voltage Lock-Out
IDDQ = 10mA
tRISE
VDDQ, VCORE Rise TIme
VCC = 3.3V, CLOAD = 10µF
0.5
ms
VDDQ Regulator Parameters
VCC MIN Input Voltage
VDDQ DEF Default Output Voltage
VDDQ = 2.5V, IDDQ = 1.5A, Note 2
2.80
2.45
V
V
2.50
-
2.55
2.5
I
DDQ = 0.01A, 2.8V ≤ VCC ≤ 3.6V,
Note 2
VDDQ LD
Load Regulation
TA = 25°C, VCC = 3.3V,
0.01A ≤ IDDQ ≤ 1.5A, Note 2
-
%
%
VDDQ LINE Line Regulation
TA = 25°C, IDDQ = 0.01A,
-1.0
-
1.0
2.8V ≤ VCC ≤ 3.6V, Note 2
eN DDQ
IDDQ LIM
IDDQ SC
Output Noise Voltage
BW = 10Hz - 100kHz, CDDQ = 10µF
49
2.0
0.5
µVrms
Current Limit
Note 2
1.7
A
A
Short Circuit Current
VDDQ < 0.3V
© 2004 California Micro Devices Corp. All rights reserved.
4
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
10/13/04