CM1431
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE1)
SYMBOL
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-
2 Level 4
Dynamic Resistance
Positive
Negative
Cut-off Frequency
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Absolute Attenuation @ 1GHz from 0dB
Level
6GHz from 0dB Level
Channel R = 100Ω,
Channel C = 15pF
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1, 4 and 5
Z
SOURCE
= 50Ω, Z
LOAD
= 50Ω,
DC Bias = 0V; Notes 1, 4 and 5
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
At 2.5VDC Reverse Bias, 1MHz,
30mVAC
I
DIODE
=10μA
V
DIODE
=
+
3.3V
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2 and 3
±30
±15
kV
kV
5.6
-1.5
CONDITIONS
MIN
80
24
12
TYP
100
30
15
6.0
0.1
6.8
-0.8
1.0
9.0
-0.4
MAX
120
36
18
UNITS
Ω
pF
pF
V
μA
V
V
V
ESD
R
DYN
2.3
0.9
110
35
30
Ω
Ω
MHz
dB
dB
f
C
A
1GHz
A
800MHz -
Absolute Attenuation @ 800MHz to
6GHz
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
T
A
=25
°
C unless otherwise specified.
ESD applied to input and output pins with respect to GND, one at a time.
These parameters are guaranteed by design and characterization.
Attenuation / RF curves characterized by a network analyzer using microprobes.
These parameters are NOT guaranteed by design, characterization and production.
© 2006 California Micro Devices Corp. All rights reserved.
02/06/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.cmd.com
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