CM1430
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE1)
SYMBOL
R
C
TOTAL
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Total Channel Capacitance
Capacitance C1
Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method
3015
b) Contact Discharge per IEC 61000-4-2 Level 4
Dynamic Resistance
Positive
Negative
Cut-off Frequency
Z
SOURCE
=50Ω, Z
LOAD
=50Ω
Channel R = 100Ω,
Channel C = 8.5pF
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
I
DIODE
=10μA
V
DIODE
=+3.3V
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2 and 3
±30
±15
2.3
0.9
200
kV
kV
Ω
Ω
MHz
5.6
-1.5
CONDITIONS
MIN
80
14
7
TYP
100
17
8.5
6.0
0.1
6.8
-0.8
1.0
9.0
-0.4
MAX
120
22
11
UNITS
Ω
pF
pF
V
μA
V
V
V
ESD
R
DYN
f
C
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: These parameters are guaranteed by design and characterization.
© 2006 California Micro Devices Corp. All rights reserved.
03/02/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.cmd.com
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