CM1405
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
DC Power per Resistor
DC Package Power Rating
RATING
-65 to +150
100
500
UNITS
°C
mW
mW
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
R
C
V
DIODE
I
LEAK
V
SIG
PARAMETER
Resistance
Capacitance
Diode Standoff Voltage
Diode Leakage Current (reverse bias)
Signal Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883,
Method 3015
b) Contact Discharge per IEC 61000-4-2
Level 4
Clamping Voltage during ESD Discharge
MIL-STD-883 (Method 3015), 8kV
Positive Transients
Negative Transients
Cut-off Frequency
Z
SOURCE
=50Ω Z
LOAD
=50Ω
,
At 2.5V DC, 1MHz, 30mV
AC
I
DIODE
= 10µA
V
DIODE
= 3.3V
I
LOAD
= 10mA
I
LOAD
= -10mA
Notes 2,4 and 5
±30
±30
Notes 2,3,4 and 5
+12
-7
R = 100Ω C = 25pF
,
70
MHz
V
V
kV
kV
5.6
-0.4
CONDITIONS
MIN
80
20
5.5
100
6.8
-0.8
9.0
-1.5
TYP
100
25
MAX
120
30
UNITS
Ω
pF
V
nA
V
V
V
ESD
V
CL
f
C
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time.
Note 3: Clamping voltage is measured at the opposite side of the EMI filter to the ESD pin. For example, if ESD is applied to Pin A1,
then clamping voltage is measured at Pin C1.
Note 4: Unused pins are left open
Note 5: These parameters are guaranteed by design and characterization.
©
2004 California Micro Devices Corp. All rights reserved.
06/16/04
430 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.calmicro.com
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