CM1220
Specifications
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Storage Temperature Range
RATING
-65 to +150
UNITS
°C
STANDARD OPERATING CONDITIONS
PARAMETER
Operating Temperature Range
RATING
-40 to +85
UNITS
°C
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL PARAMETER
C
DIODE
V
DIODE
I
LEAK
V
SIG
Diode (Channel) Capacitance
Diode Standoff Voltage
Diode Leakage Current
Signal Clamp Voltage
Positive Clamp
Negative Clamp
In-system ESD Withstand Voltage
a) Human Body Model, MIL-STD-883, Method 3015
b) Contact Discharge per IEC 61000-4-2
Dynamic Resistance
Positive
Negative
CONDITIONS
At 2.5VDC Reverse
Bias, 1MHz, 30mVAC
I
DIODE
= 10μA
V
IN
=
+
3.3V
(reverse bias voltage)
I
DIODE
= 10mA
5.6
-1.5
±30
±15
2.3
0.9
MIN
11
TYP
14
6.0
0.1
1
MAX
17
UNITS
pF
V
μA
6.8
-0.8
9.0
-0.4
V
V
kV
kV
Ω
Ω
V
ESD
Note 2
R
DYN
Note 1: T
A
=25
°
C unless otherwise specified.
Note 2: ESD applied to input and output pins with respect to GND, one at a time. Unused pins are left open. These parameters are
guaranteed by design and characterization.
Performance Information
Diode Characteristics (nominal conditions unless specified otherwise)
Capacitance (Normalized)
DC Voltage
Figure 1. Typical Diode Capacitance VS. Input Voltage (normalized to 2.5VDC)
© 2006 California Micro Devices Corp. All rights reserved.
02/03/06
490 N. McCarthy Blvd., Milpitas, CA 95035-5112
●
Tel: 408.263.3214
●
Fax: 408.263.7846
●
www.cmd.com
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