CM1210
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
I
P
V
F
PARAMETER
Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per IEC
61000-4-2 standard
Channel Clamp Voltage
CM1210-01ST, CM1210-01SC,
CM1210-02ST, CM1210-02SC
Positive Transients
Negative Transients
Channel Clamp Voltage
CM1210-04ST, CM1210-08MS
Positive Transients
Negative Transients
At 1 MHz, V
P
=3.3V, V
N
=0V,
V
IN
=1.65V; Note 2 applies
Notes 2,3 and 5; T
A
=25°C
+
6
At 8kV ESD HBM; Notes 2 & 4
CONDITIONS
(V
P
-V
N
)=3.3V
I
F
= 8mA
0.60
0.60
0.80
0.80
+0.1
1.0
0.95
0.95
+1.0
1.3
V
V
µA
pF
MIN
TYP
MAX
8.0
UNIT
S
µA
I
LEAK
C
IN
V
ESD
kV
V
CL
V
P
+ 10.0
V
N
- 10.0
At 8kV ESD HBM; Notes 2 & 4
V
P
+ 13.0
V
N
- 13.0
V
V
V
V
Note 1: All parameters specified at T
A
= -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to V
P
or V
N
only. V
P
bypassed to V
N
with a 0.22µF ceramic capacitor (see Application Information for more
details).
Note 4: Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 3.3V, V
N
grounded.
Note 5: Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω V
P
= 3.3V, V
N
grounded.
,
© 2004 California Micro Devices Corp. All rights reserved.
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
01/14/04