CM1210
ELECTRICAL OPERATING CHARACTERISTICS (SEE NOTE 1)
UNIT
S
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
I
Supply Current
(V -V )=3.3V
8.0
µA
P
P
N
V
Diode Forward Voltage
Top Diode
I = 8mA
F
F
0.60
0.60
0.80
0.80
0.95
0.95
V
V
Bottom Diode
I
Channel Leakage Current
Channel Input Capacitance
+0.1
1.0
+1.0
1.3
µA
LEAK
C
At 1 MHz, V =3.3V, V =0V,
pF
IN
P
N
V =1.65V; Note 2 applies
IN
V
ESD Protection
Notes 2,3 and 5; T =25°C
ESD
A
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per IEC
61000-4-2 standard
+6
kV
V
Channel Clamp Voltage
CM1210-01ST, CM1210-01SC,
CM1210-02ST, CM1210-02SC
Positive Transients
At 8kV ESD HBM; Notes 2 & 4
At 8kV ESD HBM; Notes 2 & 4
CL
V + 10.0
V
V
P
Negative Transients
V
- 10.0
N
Channel Clamp Voltage
CM1210-04ST, CM1210-08MS
Positive Transients
V + 13.0
V
V
P
Negative Transients
V
- 13.0
N
Note 1: All parameters specified at TA = -40°C to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to VP or VN only. VP bypassed to VN with a 0.22µF ceramic capacitor (see Application Information for more
details).
Note 4: Human Body Model per MIL-STD-883, Method 3015, CDischarge = 100pF, RDischarge = 1.5KΩ, VP = 3.3V, VN grounded.
Note 5: Standard IEC 61000-4-2 with CDischarge = 150pF, RDischarge = 330Ω, VP = 3.3V, VN grounded.
© 2004 California Micro Devices Corp. All rights reserved.
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
01/14/04
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
