CM1208-07/08
ELECTRICAL OPERATING CHARACTERISTICS
(SEE NOTE 1)
SYMBOL
I
P
V
F
PARAMETER
Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
CONDITIONS
(V
P
-V
N
)=5.0V
I
F
= 20mA; T
A
=25°C
0.60
0.65
T
A
=25°C
At 1 MHz, OSC Level =
30mV, V
P
=5V, V
N
=0V,
V
CH
=2.5V;
Note 2 applies
0.7
0.8
±0.1
3
0.95
0.95
±1.0
5
V
V
µA
pF
MIN
TYP
MAX
10
UNITS
µA
I
LEAK
C
IN
V
ESD
ESD Protection
Peak Discharge Voltage at any chan-
nel input
a) Contact discharge per
IEC 61000-4-2 standard
b) Human Body Model, MIL-
STD-883, Method 3015
Channel Clamp Voltage
Positive Transients
Negative Transients
Notes 2, 3 & 5
Notes 2, 3 & 4
At 8kV ESD HBM;
T
A
=25°C; Note 2, 3 & 4
±8
±15
kV
kV
V
CL
V
P
+ 5.0
V
N
- 5.0
V
V
Note 1: All parameters specified at T
A
=-40 to +85°C unless otherwise noted.
Note 2: These parameters guaranteed by design and characterization.
Note 3: From I/O pins to V
P
or V
N
only. A bypass capacitor between V
P and
V
N
is required. It is recommended that V
P
be bypassed
to V
N
with a 0.2µF ceramic capacitor.
Note 4: Human Body Model per MIL-STD-883, Method 3015, C
Discharge
= 100pF, R
Discharge
= 1.5KΩ, V
P
= 5.0V, V
N
grounded.
Note 5: Standard IEC 61000-4-2 with C
Discharge
= 150pF, R
Discharge
= 330Ω, V
P
= 5.0V, V
N
grounded.
Performance Information
Typical Channel Input Capacitance vs. Channel Input Voltage at T
A
=25°C
5
Input Capacitance (pF)
4
3
T y p ic a l V a r ia t io n o f C
IN
vs. V
IN
2
1
(VP = 5V, VN = 0V, 0.2
µF
chip capacitor between VP and VN)
0
0
1
2
3
4
5
Input Voltage
©
2004 California Micro Devices Corp. All rights reserved.
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Tel: 408.263.3214
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Fax: 408.263.7846
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www.calmicro.com
02/02/04
CALMIRCO [ CALIFORNIA MICRO DEVICES CORP ]
