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BS62UV1027STC 参数 Datasheet PDF下载

BS62UV1027STC图片预览
型号: BS62UV1027STC
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功率/电压CMOS SRAM 128K ×8位 [Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 435 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI  
BS62UV1027  
„ ORDERING INFORMATION  
BS62UV1027 X X Z Y Y  
SPEED  
85: 85ns  
10: 100ns  
PKG MATERIAL  
-: Normal  
G: Green  
P: Pb free  
GRADE  
C: +0oC ~ +70oC  
I: -40oC ~ +85oC  
PACKAGE  
J: SOJ  
S: SOP  
P: PDIP  
T: TSOP (8mm x 20mm)  
ST: Small TSOP (8mm x 13.4mm)  
D: DICE  
Note:  
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products  
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support  
systems and critical medical instruments.  
„ PACKAGE DIMENSIONS  
b
WITH PLATING  
c
c1  
BASE METAL  
b1  
SECTION A-A  
SOP -32  
Revision 2.1  
Jan. 2004  
R0201-BS62UV1027  
8
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