BSI
BS62LV8001
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
UNITS
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
NAME
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
-0.5
-0.5
2.0
--
--
--
--
0.8
Guaranteed Input Low
Voltage(3)
VIL
V
0.8
Vcc+0.3
Vcc+0.3
Guaranteed Input High
Voltage(3)
VIH
IIL
V
2.2
Input Leakage Current
Output Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
--
1
uA
uA
Vcc = Max, CE1 = VIH or CE2 = VIL or
OE = VIH, VI/O = 0V to Vcc
ILO
--
--
1
Vcc=3V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2mA
Vcc = Min, IOH = -1mA
--
--
--
0.4
--
V
V
Vcc=5V
Vcc=3V
Vcc=5V
2.4
70ns
70ns
Vcc=3V
Vcc=5V
Vcc=3V
Vcc=5V
Vcc=3V
--
--
--
--
--
--
--
25
61
1
Operating Power Supply CE1= VIL, CE2= VIH,
(4)
ICC
mA
Current
I
DQ = 0mA, F = Fmax(2)
--
ICCSB
Standby Current-TTL
CE1 = VIH or CE2= VIL,
I
DQ = 0mA
mA
uA
--
2
1.5
10
CE1≧Vcc-0.2V or CE2≦0.2V
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(5)
ICCSB1
Standby Current-CMOS
Vcc=5V
--
8.0
110
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. Icc_Max. is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation.
5.IccsB1 is 5uA/55uA at Vcc=3.0V/5.0V and TA=70oC.
2. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP.(1) MAX.
UNITS
CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE1≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.8
2.5
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR(Max.) is 1.3uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
CE1
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 2.1
R0201-BS62LV8001
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
