BS62LV2006
BSI
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
NAME
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Guaranteed Input Low
IL
V
-0.5
--
0.8
V
Voltage(3)
Guaranteed Input High
Voltage(3)
2.0
2.2
--
--
Vcc+0.3
1
VIH
V
IL
IN
I
Input Leakage Current
Vcc = Max, V = 0V to Vcc
--
--
uA
IH
IL
Vcc = Max, CE1 = V or CE2=V
ILO
Output Leakage Current
--
--
1
uA
IH
I/O
or OE = V , V = 0V to Vcc
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2.0mA
--
--
--
0.4
--
V
V
Vcc = Min, IOH = -1.0mA
2.4
70ns
70ns
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
--
--
--
--
--
--
--
18
45
0.5
1.0
5
Operating Power Supply Vcc=Max,CE1=VIL, CE2=VIH
Current
CC (5)
I
mA
mA
I
DQ = 0mA, F = Fmax(2)
--
Vcc = Max, CE1 = VIH or CE2=VIL
CCSB
I
Standby Current-TTL
DQ
I
= 0mA
--
0.3
Vcc = Max, CE1≧Vcc-0.2V or
CE2≦0.2V ;VIN≧ Vcc - 0.2V or
(4)
CCSB1
I
Standby Current-CMOS
uA
Vcc=5.0V
--
1.0
30
VIN≦0.2V
1. Typical characteristics are at TA = 25oC.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. IccsB1_MAX. is 3uA/10uA at Vcc=3V/5V and TA=70oC.
5. Icc_MAX. is 23mA(@3V)/55mA(@5V) under 55ns operation.
2. Fmax = 1/tRC .
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.1
1.0
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.7uA at TA=70oC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 1.1
R0201-BS62LV2006
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
