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BS616LV2016EIP70 参数 Datasheet PDF下载

BS616LV2016EIP70图片预览
型号: BS616LV2016EIP70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗CMOS SRAM 128K ×16位 [Very Low Power CMOS SRAM 128K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 242 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BS616LV2016
ORDERING INFORMATION
BS616LV2016
X
X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o
o
C: +0 C ~ +70 C
o
o
I: -40 C ~ +85 C
PACKAGE
A: BGA-48-0608
D: DICE
E: TSOP II-44
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
TSOP II-44
R0201-BS616LV2016
9
Revision
1.5
Oct.
2008