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BS616LV1011EIG55 参数 Datasheet PDF下载

BS616LV1011EIG55图片预览
型号: BS616LV1011EIG55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 64K ×16位 [Very Low Power/Voltage CMOS SRAM 64K X 16 bit]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 262 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
ORDERING INFORMATION
BS616LV1011
BS616LV1011
X X
Z
YY
SPEED
55: 55ns
70: 70ns
PKG MATERIAL
-: Normal
G: Green
P: Pb free
GRADE
C: +0
o
C ~ +70
o
C
I: -40
o
C ~ +85
o
C
PACKAGE
E: TSOP2-44
A: BGA-48-0608
Note:
BSI (Brilliance Semiconductor Inc.) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products
for use as critical components in any application in which the failure of the BSI product may be expected to result in significant injury or death, including life-support
systems and critical medical instruments.
PACKAGE DIMENSIONS
TSOP2-44
R0201-BS616LV1011
8
Revision 1.0
Apr.
2004