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BS616LV1622TC-70 参数 Datasheet PDF下载

BS616LV1622TC-70图片预览
型号: BS616LV1622TC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 1M ×16或2M ×8位切换 [Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 258 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
PIN DESCRIPTIONS
BS616LV1622
Name
A0-A19 Address Input
SAE Address Input
CIO x8/x16 select input
Function
These 20 address inputs select one of the 1,048,576 x 16-bit words in the RAM.
This address input incorporates with the above 20 address inputs select one of the
2,097,152 x 8-bit bytes in the RAM if the CIO is LOW. Don't use when CIO is HIGH.
This input selects the organization of the SRAM. 1,048,576 x 16-bit words
configuration is selected if CIO is HIGH. 2,097,152 x 8-bit bytes configuration is
selected if CIO is LOW.
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
Lower byte and upper byte data input/output control pins. The chip is deselected when
both LB and UB pins are HIGH.
These 16 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
OE Output Enable Input
LB and UB Data Byte Control Input
D0 - D15 Data Input/Output Ports
Vcc
Gnd
R0201-BS616LV1622
2
Revision 2.1
Jan.
2004