BSI
FEATURES
Very Low Power/Voltage CMOS SRAM
128K x 16 or 256K x 8 bit switchable
DESCRIPTION
BS616LV2025
• Very low operation voltage : 4.5 ~ 5.5V
• Very low power consumption :
Vcc = 5.0V
C-grade: 40mA (Max.) operating current
I -grade: 45mA (Max.) operating current
0.6uA (Typ.) CMOS standby current
• High speed access time :
-70
70ns (Max.) at Vcc = 5.0V
-55
55ns (Max.) at Vcc = 5.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
The BS616LV2025 is a high performance, very low power CMOS Static
Random Access Memory organized as 131,072 words by 16 bits or
262,144 bytes by 8 bits selectable by CIO pin and operates from a wide
range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with a typical CMOS standby current
of 0.6uA and maximum access time of 70/55 ns in 5V operation.
Easy memory expansion is provided by active HIGH chip
enable2(CE2), active LOW chip enable1(CE1), active LOW output
enable(OE) and three-state output drivers.
The BS616LV2025 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS616LV2025 is available in DICE form and 48-pin BGA type.
PRODUCT FAMILY
PRODUCT
FAMILY
BS616LV2025DC
BS616LV2025AC
BS616LV2025DI
BS616LV2025AI
OPERATING
TEMPERATURE
+0 C to +70 C
-40 C to +85 C
O
O
O
O
Vcc
RANGE
4.5V ~ 5.5V
4.5V ~ 5.5V
SPEED
( ns )
Vcc=5.0V
POWER DISSIPATION
STANDBY
Operating
( I
CCSB1
, Max )
( I
CC
, Max )
PKG TYPE
DICE
BGA-48-0608
DICE
BGA-48-0608
Vcc=5.0V
Vcc=5.0V
70 / 55
70 / 55
6uA
25uA
40mA
45mA
PIN CONFIGURATION
BLOCK DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
2048
D0
16(8)
Data
Input
Buffer
16(8)
Column I/O
Address
Input
Buffer
20
Row
Decoder
1024
Memory Array
1024 x 2048
.
.
.
.
D15
CE1
CE2
WE
OE
UB
LB
CIO
Vdd
Vss
.
.
.
.
Write Driver
16(8)
Sense Amp
128(256)
Column Decoder
16(8)
Data
Output
Buffer
14(16)
Control
Address Input Buffer
A16 A0 A1 A2 A3 A4 A5
(SAE)
Brilliance Semiconductor Inc
. reserves the right to modify document contents without notice.
R0201-BS616LV2025
1
Revision 2.4
April 2002
BSI [ BRILLIANCE SEMICONDUCTOR ]
