BSI
BS616LV2012
LOW VCC DATA RETENTION WAVEFORM ( CE Controlled )
Data Retention Mode
V
DR ≥ 1.5V
Vcc
Vcc
t
Vcc
R
t
CDR
≥
CE Vcc - 0.2V
VIH
VIH
CE
KEY TO SWITCHING WAVEFORMS
AC TEST CONDITIONS
Input Pulse Levels
Vcc/0V
5ns
WAVEFORM
INPUTS
OUTPUTS
Input Rise and Fall Times
Input and Output
MUST BE
STEADY
MUST BE
STEADY
Timing Reference Level
0.5Vcc
MAY CHANGE
FROM H TO L
WILL BE
AC TEST LOADS AND WAVEFORMS
CHANGE
Ω
Ω
1269
1269
5PF
FROM H TO L
3.3V
3.3V
MAY CHANGE
FROM L TO H
WILL BE
OUTPUT
OUTPUT
CHANGE
FROM L TO H
100PF
INCLUDING
INCLUDING
,
Ω
Ω
1404
1404
JIG AND
SCOPE
JIG AND
SCOPE
DON T CARE:
CHANGE :
STATE
ANY CHANGE
PERMITTED
UNKNOWN
FIGURE 1A
FIGURE 1B
DOES NOT
APPLY
CENTER
LINE IS HIGH
IMPEDANCE
”OFF ”STATE
THEVENIN EQUIVALENT
667
Ω
OUTPUT
1.73V
ALL INPUT PULSES
Vcc
GND
10%
90% 90%
10%
→
→
←
← 5ns
FIGURE 2
AC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )
READ CYCLE
JEDEC
PARAMETER
NAME
BS616LV2012-70
MIN. TYP. MAX.
BS616LV2012-10
MIN. TYP. MAX.
PARAMETER
NAME
DESCRIPTION
Read Cycle Time
UNIT
t
tRC
70
--
--
--
--
--
--
--
--
--
--
--
--
--
100
--
--
--
--
--
--
--
--
--
--
--
--
--
100
100
50
50
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAX
t
tAA
Address Access Time
70
70
35
35
--
AVQV
t
tACS
Chip Select Access Time
(CE)
--
--
ELQV
(1)
t
tBA
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Data Byte Control to Output High Z
Output Disable to Output in High Z
(LB,UB)
--
--
BA
t
tOE
--
--
GLQV
t
tCLZ
tBE
(CE)
10
10
10
0
15
15
15
0
E1LQX
t
(LB,UB)
--
--
BE
t
tOLZ
tCHZ
tBDO
tOHZ
--
--
GLQX
t
(CE)
35
35
30
40
40
35
EHQZ
t
(LB,UB)
0
0
BDO
t
0
0
GHQZ
tAXOX
tOH
Output Disable to Address Change
10
--
--
15
--
--
ns
NOTE :
1. tBA is 35ns/50ns (@speed=70ns/100ns) with address toggle. ; .tBA is 70ns/100ns (@speed=70ns/100ns) without address toggle.
Revision 2.4
April 2002
R0201-BS616LV2012
4
BSI [ BRILLIANCE SEMICONDUCTOR ]
