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BH62UV8001DIG55 参数 Datasheet PDF下载

BH62UV8001DIG55图片预览
型号: BH62UV8001DIG55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 1M ×8位 [Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 9 页 / 148 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV8001
n
ORDERING INFORMATION
BH62UV8001
X
X
Z
YY
SPEED
55: 55ns
PKG MATERIAL
-: Normal
G: Green, RoHS Compliant
GRADE
I: -40
o
C ~ +85
o
C
PACKAGE
D: DICE
A: BGA-48-0608
Note:
Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
n
PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1.2 Max.
BALL PITCH e = 0.75
D
8.0
E
6.0
N
48
D1
5.25
E1
3.75
D1
e
VIEW A
48 mini-BGA (6 x 8)
E1
R0201-BH62UV8001
8
Revision 1.1
May
2006