BH62UV1601
AC ELECTRICAL CHARACTERISTICS (T
A
= -40
O
C to +85
O
C)
WRITE CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
DESCRIPTION
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(CE1, WE)
(CE2)
CYCLE TIME : 55ns
(V
CC
= 3.0V)
MIN. TYP. MAX.
55
0
40
40
30
0
0
--
25
0
--
5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
25
--
--
25
--
CYCLE TIME : 70ns
(V
CC
= 1.8V)
MIN. TYP. MAX.
70
0
50
50
35
0
0
--
30
0
--
5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
30
--
--
30
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
AVAX
t
AVWL
t
AVWH
t
E1LWH
t
WLWH
t
WHAX
t
E2LAX
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHQX
t
WC
t
AS
t
AW
t
CW
t
WP
t
WR1
t
WR2
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
t
WC
ADDRESS
t
WR1
(3)
OE
t
CW
(11)
(5)
CE1
CE2
(5)
t
AW
WE
t
AS
t
OHZ
(4,10)
D
OUT
t
CW
(11)
t
WP
(2)
t
WR2
(3)
t
DH
t
DW
D
IN
R0201-BH62UV1601
6
Revision
1.2
Oct.,
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
