BSI
n
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
(1)
BH616UV8010
n
OPERATING RANGE
UNITS
V
O
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
to 4.6V
-40 to +125
-60 to +150
1.0
20
RANG
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to + 70
O
C
-25
O
C to + 85
O
C
V
CC
1.65V ~ 3.6V
1.65V ~ 3.6V
C
C
W
mA
n
CAPACITANCE
(1)
(T
A
= 25 C, f = 1.0MHz)
MAX.
UNITS
pF
pF
O
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
2.
–2.0V
in case of AC pulse width less than 30 ns
O
O
SYMBOL PAMAMETER CONDITIONS
C
IN
Input
V
IN
= 0V
6
Capacitance
Input/Output
C
IO
V
I/O
= 0V
8
Capacitance
1. This parameter is guaranteed and not 100% tested.
n
DC ELECTRICAL CHARACTERISTICS (T
A
= -25 C to +85 C)
PARAMETER
NAME
V
CC
V
IL
V
IH
I
IL
PARAMETER
Power Supply
V
CC
=1.8V
V
CC
=3.6V
TEST CONDITIONS
MIN.
1.65
-0.3
(2)
1.4
2.0
--
TYP.
(1)
--
MAX.
3.6
0.4
0.8
UNITS
V
Input Low Voltage
--
V
Input High Voltage
V
IN
= 0V to V
CC
,
CE1 = V
IH
or CE2 = V
IL
V
I/O
= 0V to V
CC
,
V
CC
=1.8V
V
CC
=3.6V
--
V
CC
+0.3
(3)
V
Input Leakage Current
--
1
uA
I
LO
Output Leakage Current
CE1 = V
IH
or CE2 = V
IL
or OE = V
IH
or
UB = LB = V
IH
V
CC
= Max, I
OL
= 0.2mA
V
CC
= Max, I
OL
= 2.0mA
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
V
CC
=1.8V
V
CC
=3.6V
--
--
1
0.2
0.4
uA
V
OL
V
OH
I
CC
I
CC1
I
CCSB
I
CCSB1
(5)
Output Low Voltage
--
V
CC
-0.2
2.4
--
--
V
Output High Voltage
Operating Power Supply
Current
Operating Power Supply
Current
Standby Current
–
TTL
V
CC
= Min, I
OH
= -0.1mA
V
CC
= Min, I
OH
= -1.0mA
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = F
MAX(4)
CE1 = V
IL
and CE2 = V
IH
,
I
DQ
= 0mA, f = 1MHz
CE1 = V
IH
, or CE2 = V
IL
,
I
DQ
= 0mA
CE1≧V
CC
-0.2V or CE2≦0.2V,
V
IN
≧V
CC
-0.2V or V
IN
≦0.2V
--
4.5
5.0
--
7
10
1.5
2.0
0.5
1.0
V
mA
--
1.0
1.5
mA
--
--
2.5
2.5
mA
Standby Current
–
CMOS
--
12
15
uA
1. Typical characteristics are at T
A
=25
O
C.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: V
CC
+1.0V in case of pulse width less than 20 ns.
4. F
MAX
=1/t
RC.
5. I
CCSB1(MAX.)
is 10uA/13uA at V
CC
=1.8V/3.6V and T
A
=0
O
C ~ 70
O
C.
R0201-BH616UV8010
Revision 1.0
Jul.
2005
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
