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BH616UV8011DIP70 参数 Datasheet PDF下载

BH616UV8011DIP70图片预览
型号: BH616UV8011DIP70
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 70ns, CMOS, ROHS COMPLIANT, DIE PACKAGE]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 11 页 / 233 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH616UV8011  
„ Revision History  
Revision No.  
History  
Draft Date  
Remark  
Initial  
1.0  
1.1  
Initial Production Version  
Change I-grade operation temperature range  
May 10,2006  
May. 25, 2006  
O
O
- from –25 C to –40 C  
1.2  
Change -55 55ns(Max.) at VCC=1.65~3.6V to  
55ns(Max.) at VCC=3V, and 70ns(Max.) at  
VCC=1.8V  
Oct. 31, 2008  
Typical value of standby current is replaced by  
maximum value in Featues and Description  
section  
Remove “-: Normal” (Leaded) PKG Material in  
ordering information  
Add in TSOP1-48 package  
Revision  
1.2  
2008  
R0201-BH616UV8011  
11  
Oct.