AMERICAN BRIGHT OPTOELECTRONICS CORP.
Power DOMILED InGan BL-PWx-xJS Series
•
Optical Characteristics:
Part Number
Chip Technology
Color
Viewing Luminous Intensity @ If @ 30mA
Angle
Iv ( mcd )
180.0 … 450.0
BL-PWT-CJS-C10
InGaN /
120
•
•
•
•
BIN S1
BIN S2
BIN T1
BIN T2
180.0 … 224.0
224.0 … 285.0
285.0 … 355.0
355.0 … 450.0
True Green, 525nm
BL-PWT-SJS-C10
285.0 … 715.0
•
•
•
•
BIN T1
BIN T2
BIN U1
BIN U2
285.0 … 355.0
355.0 … 450.0
450.0 … 560.0
560.0 … 715.0
BL-PWT-SJS-C20
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
BL-PWT-UJS-C10
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
BL-PWW-SJD-C10
285.0 … 715.0
InGaN /
120
•
•
•
•
BIN T1
BIN T2
BIN U1
BIN U2
285.0 … 355.0
355.0 … 450.0
450.0 … 560.0
560.0 … 715.0
White (0.31, 0.31)
BL-PWW-UJD-C10
450.0 … 1125.0
•
•
•
•
BIN U1
BIN U2
BIN V1
BIN V2
450.0 … 560.0
560.0 … 715.0
715.0 … 900.0
900.0 … 1125.0
Note:
1. Other luminous intensity groups are also available upon request.
2. Luminous intensity is measured with an accuracy of ±11%.
3. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength
group is allowed for each reel.
4. InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended
and may yield unpredictable performance Current pulsing should be used for dimming purposes.
5. An optional Vf binning is also available upon request. Binning scheme is as per following table.
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BRTLED [ BRTLED ]
