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BD-E524RD 参数 Datasheet PDF下载

BD-E524RD图片预览
型号: BD-E524RD
PDF下载: 下载PDF文件 查看货源
内容描述: HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓 [hi-eff red chips, which are made from GaAsP on GaP substrate]
分类和应用:
文件页数/大小: 3 页 / 222 K
品牌: BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
 浏览型号BD-E524RD的Datasheet PDF文件第1页浏览型号BD-E524RD的Datasheet PDF文件第2页  
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BD-E524RD
Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
1.0
Relative Radiant Intensity
0.5
0
560
590
620
Wavelength(nm)
650
680
710
740
Relative Luminous Intensity
(@20mA)
0
1
2
3
4
5
50
Fig.2 Forward Current VS.
Forward Voltage
3.0
2.5
2.0
1.5
1.0
0.5
Fig.3 Relative Luminous
Intensity VS.
Ambient Temperature
Forward Current (mA)
40
30
20
10
0
Forward Voltage (V)
Fig.4 Relative Luminous
Intensity VS.
Forward Current
0
-40
Ambient Temperature Ta( C)
Fig.5 Forward Current
Derating Curve VS.
Ambient Temperature
-20
0
20
40
60
Relative Luminous Intensity
(@20mA)
3.0
2.0
Forward Current(mA)
1.0
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http://www.brtled.com
40
30
20
10
0
0
10
20
30
40
50
0
20
40
60
80
50
0.0
100 120
Forward Current(mA)
Ambient Temperature Ta( C)
Ver.1.0 Page 3 of 3